 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| STC9014 NPN Silicon Transistor Audio Frequency Amplifier & High Frequency OSC. * * * * Complement to STC9015 Collector-Base Voltage : VCBO=60V High Current Gain Bandwidth Product : fT=300MHz (TYP) Suffix "-C" means Center Collector (1. Emitter 2. Collector 3. Base) 1 TO-92 1. Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25C unless otherwise noted Symbol VCBO VCEO VEBO IC PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Value 60 50 5 150 250 150 -55 ~ 150 Units V V V mA mW C C Electrical Characteristics Ta=25C unless otherwise noted Symbol BVCBO BVCEO BVEBO ICBO IEBO hFE VCE (sat) fT Cob NF Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Current Gain Bandwidth Product Output Capacitance Noise Figure Test Condition IC=100A, IE=0 IC=10mA, IB=0 IE=10A, IC=0 VCB=40V, IE=0 VEB=3V, IC=0 VCE=6V, IC=1.0mA IC=100mA, IB=10mA VCE=6V, IC=10mA VCB=6V, IE=0, f=1MHz VCE=6V, IC=0.5mA f=1KHz, RS=500 40 0.15 300 2.5 4.0 Min. 60 50 5 0.1 0.1 700 0.3 V MHz pF dB Typ. Max. Units V V V A A hFE Classification Classification hFE A 40 ~ 140 B 120 ~ 240 C 200 ~ 400 D 350 ~ 700 1/2 Typical Characteristics STC9014 100 100 IC[mA], COLLECTOR CURRENT IB = 400A 80 VCE = 6V IB = 300A IB = 250A 60 IC[mA], COLLECTOR CURRENT IB = 350A 10 IB = 200A 40 IB = 150A IB = 100A 1 20 IB = 50A 0 0 2 4 6 8 10 12 14 16 18 20 0.1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VCE[V], COLLECTOR-EMITTER VOLTAGE VBE[V], BASE-EMITTER VOLTAGE Figure 1. Static Characteristic Figure 2. Transfer Characteristic VBE(sat), VCE(sat)[V], SATURATION VOLTAGE 1000 10 VCE = 6V IC = 10 IB hFE, DC CURRENT GAIN 1 V BE(sat) 100 0.1 V CE(sat) 10 1 10 100 1000 0.01 1 10 100 1000 IC[mA], COLLECTOR CURRENT IC[mA], COLLECTOR CURRENT Figure 3. DC current Gain Figure 4. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage fT[MHz], CURRENT GAIN BANDWIDTH PRODUCT 100 1000 IE = 0 f = 1MHz VCE = 6V Cob [pF], CAPACITANCE 10 100 1 10 0.1 1 10 100 1000 1 0.1 1 10 100 VCB [V], COLLECTOR-BASE VOLTAGE IC[mA], COLLECTOR CURRENT Figure 5. Output Capacitance Figure 6. Current Gain Bandwidth Product 2/2 |
Price & Availability of STC9014
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |